High frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors

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dc.creatorStaii, Cristian
dc.creatorShao, Rui
dc.creatorBonnell, Dawn A.
dc.creatorJohnson Jr, Alan T.
dc.date2005-04-21
dc.date2005-04-22
dc.date.accessioned2026-07-07T03:04:50Z
dc.date.available2026-07-07T03:04:50Z
dc.descriptionWe use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to image changes in the impedance of swCN-FET circuits induced by the SGM-tip gate. In contrast to earlier reports, the results of both experiments are consistent with a simple RC parallel circuit model of the swCN-FET, with a time constant of 0.3 ms. We also use the SGM tip to show the local nature of the memory effect normally observed in swCN-FETs, implying that nanotube-based memory cells can be miniaturized to dimensions of the order of tens of nm.
dc.description7 pages, 3 figures, to appear in Nano Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0504534
dc.identifierhttp://arxiv.org/abs/cond-mat/0504534
dc.identifierdoi:10.1021/nl050316a
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26237
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleHigh frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors
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