Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

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dc.creatorPark, Y. D.
dc.creatorLim, J. D.
dc.creatorSuh, K. S.
dc.creatorShim, S. B.
dc.creatorLee, J. S.
dc.creatorAbernathy, C. R.
dc.creatorPearton, S. J.
dc.creatorKim, Y. S.
dc.creatorKhim, Z. G.
dc.creatorWilson, R. G.
dc.date2003-08-11
dc.date.accessioned2026-07-07T02:52:52Z
dc.date.available2026-07-07T02:52:52Z
dc.descriptionHighly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.
dc.identifierhttps://arxiv.org/abs/cond-mat/0308200
dc.identifierhttp://arxiv.org/abs/cond-mat/0308200
dc.identifierPhys. Rev. B 68, 085210 (2003)
dc.identifierdoi:10.1103/PhysRevB.68.085210
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22003
dc.subjectMaterials Science
dc.titleCarrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
dc.typetext

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