Effects of a parallel magnetic field on the novel metallic behavior in two dimensions

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dc.creatorEng, K.
dc.creatorFeng, X. G.
dc.creatorPopovic, Dragana
dc.creatorWashburn, S.
dc.date2000-12-05
dc.date.accessioned2026-07-07T02:39:40Z
dc.date.available2026-07-07T02:39:40Z
dc.descriptionMagnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as σ(n_s,T,B=0)=σ(n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in σwith increasing B, followed by a much weaker σ(B). At higher n_s, the initial drop of MC is less pronounced.
dc.description2 pages, 3 figures; to be publ. in the Proceedings of the 25th Int. Conf. on the Physics of Semiconductors (Osaka, Sept. 2000)
dc.identifierhttps://arxiv.org/abs/cond-mat/0012063
dc.identifierhttp://arxiv.org/abs/cond-mat/0012063
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17104
dc.subjectStrongly Correlated Electrons
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.titleEffects of a parallel magnetic field on the novel metallic behavior in two dimensions
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