An ion-implanted silicon single-electron transistor

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dc.creatorChan, V. C.
dc.creatorMcCamey, D. R.
dc.creatorBuehler, T. M.
dc.creatorFerguson, A. J.
dc.creatorReilly, D. J.
dc.creatorDzurak, A. S.
dc.creatorClark, R. G.
dc.creatorYang, C.
dc.creatorJamieson, D. N.
dc.date2005-10-14
dc.date.accessioned2026-07-07T06:44:23Z
dc.date.available2026-07-07T06:44:23Z
dc.descriptionWe report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Σ$ $\sim$ 250 $μ$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.
dc.description3 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510373
dc.identifierhttp://arxiv.org/abs/cond-mat/0510373
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102761
dc.subjectMesoscale and Nanoscale Physics
dc.titleAn ion-implanted silicon single-electron transistor
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