Feasibility of an electron-based crystalline undulator

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dc.creatorTabrizi, M.
dc.creatorKorol, A. V.
dc.creatorSolov'yov, A. V.
dc.creatorGreiner, Walter
dc.date2006-11-01
dc.date.accessioned2026-07-07T10:42:59Z
dc.date.available2026-07-07T10:42:59Z
dc.descriptionThe feasibility to generate powerful monochromatic radiation of the undulator type in the gamma region of the spectrum by means of planar channeling of ultra-relativistic electrons in a periodically bent crystal is proven. It is shown that an electron-based crystalline undulator operates in the regime of higher beam energies than a positron-based one does. A numerical analysis is performed for a 50 GeV electron channeling in Si along the (111) crystallographic planes.
dc.description4 pages, 4 figures, revtex, submitted to PRL
dc.identifierhttps://arxiv.org/abs/physics/0611012
dc.identifierhttp://arxiv.org/abs/physics/0611012
dc.identifierPhys.Rev.Lett.98:164801,2007
dc.identifierdoi:10.1103/PhysRevLett.98.164801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/182144
dc.subjectAccelerator Physics
dc.titleFeasibility of an electron-based crystalline undulator
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