Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

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dc.creatorArapov, Yu. G.
dc.creatorKuznetsov, O. A.
dc.creatorNeverov, V. N.
dc.creatorHarus, G. I.
dc.creatorShelushinina, N. G.
dc.creatorYakunin, M. V.
dc.date2001-05-15
dc.date.accessioned2026-07-07T02:41:25Z
dc.date.available2026-07-07T02:41:25Z
dc.descriptionTwo models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.
dc.descriptionto be presented at the 9-th International Symposium "Nanostructures-2001", St.Petersburg, Russia, June 2001
dc.identifierhttps://arxiv.org/abs/cond-mat/0105285
dc.identifierhttp://arxiv.org/abs/cond-mat/0105285
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17733
dc.subjectMesoscale and Nanoscale Physics
dc.titleImpurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
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