Ballistic Intrinsic Spin-Hall Effect in HgTe Nanostructures

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dc.creatorBruene, C.
dc.creatorRoth, A.
dc.creatorNovik, E. G.
dc.creatorKoenig, M.
dc.creatorBuhmann, H.
dc.creatorHankiewicz, E. M.
dc.creatorHanke, W.
dc.creatorSinova, J.
dc.creatorMolenkamp, L. W.
dc.date2008-12-19
dc.date.accessioned2026-07-07T12:20:53Z
dc.date.available2026-07-07T12:20:53Z
dc.descriptionWe report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe quantum wells. By controlling the strength of the spin-orbit splittings and the n-type to p-type transition by a top-gate, we observe a large non-local resistance signal due to the ISHE in the p-regime, of the order of kOhms, which is several orders of magnitude larger than in metals. In the n-regime, as predicted by theory, the signal is at least an order of magnitude smaller. We verify our experimental observation by quantum transport calculations which show quantitative agreement with the experiments.
dc.description12 pages, incl. 5 figures
dc.identifierhttps://arxiv.org/abs/0812.3768
dc.identifierhttp://arxiv.org/abs/0812.3768
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/213196
dc.subjectMesoscale and Nanoscale Physics
dc.titleBallistic Intrinsic Spin-Hall Effect in HgTe Nanostructures
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