Conductance switching, hysteresis, and magnetoresistance in organic semiconductors

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dc.creatorWei, J. H.
dc.creatorXie, S. J.
dc.creatorMei, L. M.
dc.creatorYan, YiJing
dc.date2005-08-18
dc.date2006-08-20
dc.date.accessioned2026-07-07T06:41:35Z
dc.date.available2026-07-07T06:41:35Z
dc.descriptionThe controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical potential. We further obtain an exponential dependence of the magnetoresistance as a function of the applied bias voltage. The implications of calculated results in relation to experiments and device applications are addressed and commented.
dc.description21 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0508417
dc.identifierhttp://arxiv.org/abs/cond-mat/0508417
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101721
dc.subjectMaterials Science
dc.subjectSoft Condensed Matter
dc.titleConductance switching, hysteresis, and magnetoresistance in organic semiconductors
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