High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes
| dc.creator | Jena, Debdeep | |
| dc.date | 2008-04-24 | |
| dc.date | 2008-06-08 | |
| dc.date.accessioned | 2026-07-07T09:42:57Z | |
| dc.date.available | 2026-07-07T09:42:57Z | |
| dc.description | It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the LO phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van-Hove singularity at the band-edge. Above this critical carrier density, the ensemble saturation velocity at high-fields is found to be independent of the bandgap, but strongly dependent on the carrier density, explaining recent observations. | |
| dc.description | 5 pages, 5 figures | |
| dc.identifier | https://arxiv.org/abs/0804.3997 | |
| dc.identifier | http://arxiv.org/abs/0804.3997 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/162373 | |
| dc.subject | Materials Science | |
| dc.title | High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes | |
| dc.type | text |