Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties

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dc.creatorElsen, M.
dc.creatorJaffres, H.
dc.creatorMattana, R.
dc.creatorThevenard, L.
dc.creatorLemaitre, A.
dc.creatorGeorge, J. -M.
dc.date2007-06-01
dc.date.accessioned2026-07-07T08:03:50Z
dc.date.available2026-07-07T08:03:50Z
dc.descriptionWe present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Δ$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6x6 band k.p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) \textit{vs.} (Ga,Mn)As Fermi energy (E$_F$) and spin-splitting parameter (B$_G$). This allows to give a rough estimation of the exchange energy $Δ$$_{exch}$=6B$_G$$\simeq$120 meV and hole concentration p$\simeq1.10^{20}$cm$^{-3}$ of (Ga,Mn)As and beyond gives the general trend of TMR and TAMR \textit{vs.} the selected hole band involved in the tunneling transport.
dc.description6 pages, 4 figures. submitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/0706.0109
dc.identifierhttp://arxiv.org/abs/0706.0109
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129730
dc.subjectMaterials Science
dc.titleSpin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties
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