Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy

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dc.creatorTsybulenko, V. V.
dc.creatorBaganov, Ye. A.
dc.creatorKrasnov, V. A.
dc.creatorShutov, S. V.
dc.date2008-08-08
dc.date2008-08-14
dc.date.accessioned2026-07-07T09:56:22Z
dc.date.available2026-07-07T09:56:22Z
dc.descriptionThe possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state conditions specifying such parameters of the process as the temperature and/or the thickness of the growth space it is possible to obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of the content of P towards the surface of the layer that possess the composition gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was also shown that control of the composition of ternary solid solutions at liquid phase electroepitaxy can be realized by use of unsteady state electric field.
dc.description17 pages, 5 figures, 1 table
dc.identifierhttps://arxiv.org/abs/0808.1229
dc.identifierhttp://arxiv.org/abs/0808.1229
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/166957
dc.subjectMaterials Science
dc.titleSimulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy
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