The surfactant effect in semiconductor thin film growth

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dc.creatorKandel, Daniel
dc.creatorKaxiras, Efthimios
dc.date1999-01-19
dc.date.accessioned2026-07-07T03:12:38Z
dc.date.available2026-07-07T03:12:38Z
dc.descriptionThe theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants suppress growth of three dimensional islands in heteroepitaxy. We argue that the dominant mechanism is passivation of island edges, which leads to suppression of attachment and detachment of atoms to and from island edges.
dc.description38 pages, LaTex, Submitted to Solid State Physics
dc.identifierhttps://arxiv.org/abs/cond-mat/9901177
dc.identifierhttp://arxiv.org/abs/cond-mat/9901177
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28985
dc.subjectMaterials Science
dc.subjectStatistical Mechanics
dc.titleThe surfactant effect in semiconductor thin film growth
dc.typetext

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