Rigorous Simulation of 3D Masks

Simple item page
dc.creatorBurger, S.
dc.creatorKöhle, R.
dc.creatorZschiedrich, L.
dc.creatorNguyen, H.
dc.creatorSchmidt, F.
dc.creatorMärz, R.
dc.creatorNölscher, C.
dc.date2006-10-24
dc.date.accessioned2026-07-07T13:18:42Z
dc.date.available2026-07-07T13:18:42Z
dc.descriptionWe perform 3D lithography simulations by using a finite-element solver. To proof applicability to real 3D problems we investigate DUV light propagation through a structure of size 9 microns times 4 microns times 65 nm. On this relatively large computational domain we perform rigorous computations (No Hopkins) taking into account a grid of 11 times 21 source points with two polarization directions each. We obtain well converged results with an accuracy of the diffraction orders of about one percent. The results compare well to experimental aerial imaging results. We further investigate the convergence of 3D solutions towards quasi-exact results obtained with different methods.
dc.description8 pages, 5 figures (see original publication for images with a better resolution)
dc.identifierhttps://arxiv.org/abs/physics/0610218
dc.identifierhttp://arxiv.org/abs/physics/0610218
dc.identifierProc. SPIE Vol. 6349 (2006) 63494Z. (26th Annual BACUS Symposium on Photomask Technology, P. M. Martin, R. J. Naber, Eds.)
dc.identifierdoi:10.1117/12.687816
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/231511
dc.subjectOptics
dc.subjectComputational Physics
dc.titleRigorous Simulation of 3D Masks
dc.typetext

Files

Collections

arXiv