Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

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dc.creatorDussart, Remi
dc.creatorThomann, Anne-Lise
dc.creatorPichon, Laurianne E.
dc.creatorBedra, Larbi
dc.creatorSemmar, Nadjib
dc.creatorLefaucheux, Philippe
dc.creatorMathias, Jacky
dc.creatorTessier, Yves
dc.date2008-11-04
dc.date.accessioned2026-07-07T10:15:28Z
dc.date.available2026-07-07T10:15:28Z
dc.descriptionEnergy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature.
dc.description3 pages
dc.identifierhttps://arxiv.org/abs/0811.0598
dc.identifierhttp://arxiv.org/abs/0811.0598
dc.identifierApplied Physics Letters 93 (2008) 131502
dc.identifierdoi:10.1063/1.2995988
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/173183
dc.subjectPlasma Physics
dc.titleDirect measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma
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