On possible spin injection at non-ideal Schottky contacts

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dc.creatorKorosak, D.
dc.creatorCvikl, B.
dc.date2003-05-21
dc.date2004-02-03
dc.date.accessioned2026-07-07T02:51:27Z
dc.date.available2026-07-07T02:51:27Z
dc.descriptionThe role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.
dc.description14 pages, 3 figures revised version 02-02-2004
dc.identifierhttps://arxiv.org/abs/cond-mat/0305501
dc.identifierhttp://arxiv.org/abs/cond-mat/0305501
dc.identifierSolid State Comm. 130, 765 (2004)
dc.identifierdoi:10.1016/j.ssc.2004.03.045
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21465
dc.subjectMaterials Science
dc.titleOn possible spin injection at non-ideal Schottky contacts
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