Excitons in coupled InAs/InP self-assembled quantum wires

Simple item page
dc.creatorSidor, Y.
dc.creatorPartoens, B.
dc.creatorPeeters, F. M.
dc.creatorBen, T.
dc.creatorPonce, A.
dc.creatorSales, D. L.
dc.creatorMolina, S. I.
dc.creatorFuster, D.
dc.creatorGonzalez, L.
dc.creatorGonzalez, Y.
dc.date2007-02-08
dc.date.accessioned2026-07-07T07:45:29Z
dc.date.available2026-07-07T07:45:29Z
dc.descriptionOptical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states and the photoluminescence peak energies are calculated. Where possible we compare with available photo-luminescence data from which it was possible to determine the height of the quantum wires. An anti-crossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wavefunction. This crossing is the signature of two different coupling regimes.
dc.description8 pages, 8 figures. To appear in Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0702206
dc.identifierhttp://arxiv.org/abs/cond-mat/0702206
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123546
dc.subjectMesoscale and Nanoscale Physics
dc.titleExcitons in coupled InAs/InP self-assembled quantum wires
dc.typetext

Files

Collections

arXiv