Thermalization process of a photo-generated plasma in semiconductors

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dc.creatorRodriguez-Meza, M. A.
dc.creatorCarrillo, J. L.
dc.date2008-11-01
dc.date.accessioned2026-07-07T10:14:46Z
dc.date.available2026-07-07T10:14:46Z
dc.descriptionThe kinetics of ultra-fast processes which leads to the thermalization condition of a photo-excited plasma in semiconductor systems is studied theoretically. We analyze the time evolution of a carrier population generated by a finite optical pulse, from the beginning of the pulse until the time in which the carrier population reaches a quasi-equilibrium condition. We calculate the energy fluxes caused by the main interaction mechanisms along the different stages the system passes through. Our analysis is done by using a set of non-linear rate equations which govern the time evolution of the carrier population in the energy space. We consider the main interaction mechanisms, including dynamic screening and phonon population effects.
dc.description9 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0811.0108
dc.identifierhttp://arxiv.org/abs/0811.0108
dc.identifierRevista Mexicana de Fisica, 48, 52-60 (2002)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172994
dc.subjectStatistical Mechanics
dc.titleThermalization process of a photo-generated plasma in semiconductors
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