Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions
| dc.creator | Yeh, Sheng-Shiuan | |
| dc.creator | Lin, Juhn-Jong | |
| dc.date | 2009-01-08 | |
| dc.date.accessioned | 2026-07-07T13:10:24Z | |
| dc.date.available | 2026-07-07T13:10:24Z | |
| dc.description | We have measured the differential conductances $G(V,T)$ in several Al/AlO$_{x}$/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to $\sim$ 16 K, the zero-bias conductance $G(0,T)$ crosses over from a standard $-$ln$T$ dependence to a novel $- \sqrt{T}$ dependence. Correspondingly, the finite bias conductance $G(V,T)$ reveals a two-channel Kondo scaling behavior between $\sim$ 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-$\frac12$ Sc atoms situated slightly inside the AlO$_x$/Sc interface. | |
| dc.description | 4 pages, 3 figures. Phys. Rev. B (accepted) | |
| dc.identifier | https://arxiv.org/abs/0901.0954 | |
| dc.identifier | http://arxiv.org/abs/0901.0954 | |
| dc.identifier | Phys. Rev. B 79 (2009) 012411 | |
| dc.identifier | doi:10.1103/PhysRevB.79.012411 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/229004 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions | |
| dc.type | text |