Catalyst-free selective area growth of InN nanocolumns by MBE

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dc.creatorDenker, C.
dc.creatorMalindretos, J.
dc.creatorLandgraf, B.
dc.creatorRizzi, A.
dc.date2009-05-19
dc.date.accessioned2026-07-07T13:16:31Z
dc.date.available2026-07-07T13:16:31Z
dc.descriptionSelective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.
dc.identifierhttps://arxiv.org/abs/0905.3133
dc.identifierhttp://arxiv.org/abs/0905.3133
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230817
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleCatalyst-free selective area growth of InN nanocolumns by MBE
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