Suppression of rectification at metal-Mott-insulator interfaces
| dc.creator | Yonemitsu, Kenji | |
| dc.creator | Maeshima, Nobuya | |
| dc.creator | Hasegawa, Tatsuo | |
| dc.date | 2007-10-30 | |
| dc.date.accessioned | 2026-07-07T13:08:14Z | |
| dc.date.available | 2026-07-07T13:08:14Z | |
| dc.description | Charge transport through metal-Mott-insulator interfaces is studied and compared with that through metal-band-insulator interfaces. For band insulators, rectification has been known to occur owing to a Schottky barrier, which is produced by the work-function difference. For Mott insulators, however, qualitatively different current-voltage characteristics are obtained. Theoretically, we use the one-dimensional Hubbard model for a Mott insulator and attach to it the tight-binding model for metallic electrodes. A Schottky barrier is introduced by a solution to the Poisson equation with a simplified density-potential relation. The current density is calculated by solving the time-dependent Schrödinger equation. We mainly use the time-dependent Hartree-Fock approximation, and also use exact many-electron wave functions on small systems for comparison. Rectification is found to be strongly suppressed even for large work-function differences. We show its close relationship with the fact that field-effect injections into one-dimensional Mott insulators are ambipolar. Experimentally, we fabricated asymmetric contacts on top of single crystals of quasi-one-dimensional organic Mott and band insulators. Rectification is strongly suppressed at an interface between metallic magnesium and Mott-insulating (BEDT-TTF)(F$_2$TCNQ) [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene, F$_2$TCNQ=2,5-difluorotetracyanoquinodimethane]. | |
| dc.description | 6 pages, 5 figures, accepted for publication in Phys. Rev. B | |
| dc.identifier | https://arxiv.org/abs/0710.5586 | |
| dc.identifier | http://arxiv.org/abs/0710.5586 | |
| dc.identifier | Phys. Rev. B 76, 235118 (2007) | |
| dc.identifier | doi:10.1103/PhysRevB.76.235118 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/228355 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Suppression of rectification at metal-Mott-insulator interfaces | |
| dc.type | text |