Tuning a Resonance in the Fock Space: Optimization of Phonon Emission in a Resonant Tunneling Device

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dc.creatorTorres, L. E. F. Foa
dc.creatorPastawski, H. M.
dc.creatorMakler, S. S.
dc.date2001-02-09
dc.date2001-11-06
dc.date.accessioned2026-07-07T06:31:44Z
dc.date.available2026-07-07T06:31:44Z
dc.descriptionPhonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry condition in this space that can strongly enhance the emission of longitudinal optical phonons. For devices with thin emitter barriers this is achieved by a wider collector's barrier.
dc.description4 pages, 3 figures. Figure 1 changed, typos corrected
dc.identifierhttps://arxiv.org/abs/cond-mat/0102173
dc.identifierhttp://arxiv.org/abs/cond-mat/0102173
dc.identifierPhys. Rev. B 64, 193304 (2001)
dc.identifierdoi:10.1103/PhysRevB.64.193304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98693
dc.subjectMesoscale and Nanoscale Physics
dc.titleTuning a Resonance in the Fock Space: Optimization of Phonon Emission in a Resonant Tunneling Device
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