Two-photon spin injection in semiconductors

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dc.creatorBhat, R. D. R.
dc.creatorNemec, P.
dc.creatorKerachian, Y.
dc.creatorvan Driel, H. M.
dc.creatorSipe, J. E.
dc.creatorSmirl, Arthur L.
dc.date2004-08-17
dc.date.accessioned2026-07-07T02:59:48Z
dc.date.available2026-07-07T02:59:48Z
dc.descriptionA comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with theory. The macroscopic symmetry and microscopic theory for two-photon spin injection are reviewed, and the latter is generalized to account for spin-splitting of the bands. The degree of spin polarization of one- and two-photon optical orientation need not be equal, as shown by calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14x14 k.p Hamiltonian including remote band effects. By including the higher conduction bands in the calculation, cubic anisotropy and the role of allowed-allowed transitions can be investigated. The allowed-allowed transitions do not conserve angular momentum and can cause a high degree of spin polarization close to the band edge; a value of 78% is calculated in GaSb, but by varying the material parameters it could be as high as 100%. The selection rules for spin injection from allowed-allowed transitions are presented, and interband spin-orbit coupling is found to play an important role.
dc.description12 pages including 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0408386
dc.identifierhttp://arxiv.org/abs/cond-mat/0408386
dc.identifierPhys. Rev. B 71, 035209 (2005) (12 pages)
dc.identifierdoi:10.1103/PhysRevB.71.035209
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24656
dc.subjectOther Condensed Matter
dc.subjectMesoscale and Nanoscale Physics
dc.titleTwo-photon spin injection in semiconductors
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