Threshold fields for antiparallel ferroelectric domain wall motion

Simple item page
dc.creatorChoudhury, Samrat
dc.creatorLi, Yulan
dc.creatorOdagawa, Nozomi
dc.creatorVasudevarao, Aravind
dc.creatorTian, L.
dc.creatorCapek, Pavel
dc.creatorDierolf, Volkmar
dc.creatorMorozovska, Anna N.
dc.creatorEliseev, Eugene A.
dc.creatorChen, Long-qing
dc.creatorCho, Yasuo
dc.creatorKalinin, Sergei
dc.creatorGopalan, Venkatraman
dc.date2008-06-09
dc.date.accessioned2026-07-07T09:43:25Z
dc.date.available2026-07-07T09:43:25Z
dc.descriptionWhile an ideal antiparallel ferroelectric wall is considered a unit cell in width (~0.5nm), we show using phase field modeling that the threshold field for moving this wall dramatically drops by 2-3 orders of magnitude if the wall were diffuse by only ~2-3nm. Since antiparallel domain walls are symmetry allowed in all ferroelectrics, and since domain wall broadening on nanometer scale is widely reported in literature, this mechanism is generally applicable to all ferroelectrics.
dc.description14 pages; 2 figures
dc.identifierhttps://arxiv.org/abs/0806.1510
dc.identifierhttp://arxiv.org/abs/0806.1510
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162547
dc.subjectMaterials Science
dc.titleThreshold fields for antiparallel ferroelectric domain wall motion
dc.typetext

Files

Collections

arXiv