GW method applied to localized 4f electron systems
| dc.creator | Chantis, Athanasios N. | |
| dc.creator | van Schilfgaarde, Mark | |
| dc.creator | Kotani, Takao | |
| dc.date | 2006-10-19 | |
| dc.date | 2007-01-29 | |
| dc.date.accessioned | 2026-07-07T08:41:40Z | |
| dc.date.available | 2026-07-07T08:41:40Z | |
| dc.description | We apply a recently developed quasiparticle self-consistent $GW$ method (QSGW) to Gd, Er, EuN, GdN, ErAs, YbN and GdAs. We show that QSGW combines advantages separately found in conventional $GW$ and LDA+$U$ theory, in a simple and fully \emph{ab initio} way. \qsgw reproduces the experimental occupied $4f$ levels well, though unoccupied levels are systematically overestimated. Properties of the Fermi surface responsible for electronic properties are in good agreement with available experimental data. GdN is predicted to be very near a critical point of a first-order metal-insulator transition. | |
| dc.description | 5 pages,3 figures, 2 tables | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0610528 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0610528 | |
| dc.identifier | Phys. Rev. B 76, 165126 (2007) | |
| dc.identifier | doi:10.1103/PhysRevB.76.165126 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/141749 | |
| dc.subject | Materials Science | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | GW method applied to localized 4f electron systems | |
| dc.type | text |