Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

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dc.creatorOsinniy, V.
dc.creatorDybko, K.
dc.creatorJedrzejczak, A.
dc.creatorArciszewska, M.
dc.creatorDobrowolski, W.
dc.creatorStory, T.
dc.creatorRadchenko, M. V.
dc.creatorSichkovskiy, V. I.
dc.creatorLashkarev, G. V.
dc.creatorOlsthoorn, S. M.
dc.creatorSadowski, J.
dc.date2004-09-24
dc.date.accessioned2026-07-07T03:01:00Z
dc.date.available2026-07-07T03:01:00Z
dc.descriptionThermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about carrier transport mechanisms in layers with both metallic and non-metallic type of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T>70 K) the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF=220+-25 meV, nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. The layers exhibiting insulating electrical properties show 1/T-type increase of thermoelectric power at low temperatures.
dc.description21 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409659
dc.identifierhttp://arxiv.org/abs/cond-mat/0409659
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24934
dc.subjectMaterials Science
dc.titleThermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
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