Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

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dc.creatorBorzdov, Andrei
dc.creatorPozdnyakov, Dmitry
dc.creatorGalenchik, Vadim
dc.creatorBorzdov, Vladimir
dc.creatorKomarov, Fadei
dc.date2006-04-07
dc.date.accessioned2026-07-07T07:05:21Z
dc.date.available2026-07-07T07:05:21Z
dc.descriptionSelf-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.
dc.description3 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0604200
dc.identifierhttp://arxiv.org/abs/cond-mat/0604200
dc.identifierPhysica Status Solidi (b) 242 (15), R134-R136 (2005)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109641
dc.subjectMesoscale and Nanoscale Physics
dc.titleSelf-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas
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