Deposition of Cu2Ta4O12 by pulsed laser deposition

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dc.creatorHeinrich, A.
dc.creatorRenner, B.
dc.creatorLux, R.
dc.creatorEbbinghaus, S. G.
dc.creatorReller, A.
dc.creatorStritzker, B.
dc.date2003-10-07
dc.date.accessioned2026-07-07T02:54:02Z
dc.date.available2026-07-07T02:54:02Z
dc.descriptionCu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
dc.description7 pages, 9 figures, submitted to Thin Solid Films
dc.identifierhttps://arxiv.org/abs/cond-mat/0310155
dc.identifierhttp://arxiv.org/abs/cond-mat/0310155
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22386
dc.subjectMaterials Science
dc.titleDeposition of Cu2Ta4O12 by pulsed laser deposition
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