Nanogaps with very large aspect ratios for electrical measurements

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dc.creatorFursina, A.
dc.creatorLee, S.
dc.creatorSofin, R. G. S.
dc.creatorShvets, I. V.
dc.creatorNatelson, D.
dc.date2008-02-21
dc.date.accessioned2026-07-07T13:16:37Z
dc.date.available2026-07-07T13:16:37Z
dc.descriptionFor nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such Ti/Au electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0802.2974
dc.identifierhttp://arxiv.org/abs/0802.2974
dc.identifierAppl. Phys. Lett. 92, 113102 (2008)
dc.identifierdoi:10.1063/1.2895644
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230849
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleNanogaps with very large aspect ratios for electrical measurements
dc.typetext

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