Reflectionless Tunneling Through a Double-Barrier NS Junction
| dc.creator | Melsen, J. A. | |
| dc.creator | Beenakker, C. W. J. | |
| dc.date | 1994-06-07 | |
| dc.date.accessioned | 2026-07-07T03:07:18Z | |
| dc.date.available | 2026-07-07T03:07:18Z | |
| dc.description | The resistance is computed of an ${\rm NI}_{1}{\rm NI}_{2}{\rm S}$ junction, where N = normal metal, S = superconductor, and ${\rm I}_{i}$ = insulator or tunnel barrier (transmission probability per mode $Γ_{i}$). The ballistic case is considered, as well as the case that the region between the two barriers contains disorder (mean free path $l$, barrier separation $L$). It is found that the resistance at fixed $Γ_{2}$ shows a {\em minimum} as a function of $Γ_{1}$, when $Γ_{1}\approx\sqrt{2}Γ_{2}$, provided $l\gtrsimΓ_2 L$. The minimum is explained in terms of the appearance of transmission eigenvalues close to one, analogous to the ``reflectionless tunneling'' through a NIS junction with a disordered normal region. The theory is supported by numerical simulations. ***Submitted to Physica B.*** | |
| dc.description | 10 pages, REVTeX-3.0, 6 postscript figures appended as self-extracting archive, INLO-PUB-940607m | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9406034 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9406034 | |
| dc.identifier | Physica B 203, 219 (1994) | |
| dc.identifier | doi:10.1016/0921-4526(94)90062-0 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/27118 | |
| dc.subject | Condensed Matter | |
| dc.title | Reflectionless Tunneling Through a Double-Barrier NS Junction | |
| dc.type | text |