Doping dependent charge injection and band alignment in organic field-effect transistors

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dc.creatorHamadani, B. H.
dc.creatorDing, H.
dc.creatorHao, Y.
dc.creatorNatelson, D.
dc.date2005-12-14
dc.date.accessioned2026-07-07T06:53:22Z
dc.date.available2026-07-07T06:53:22Z
dc.descriptionWe have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower doping. Ultraviolet photoemission spectroscopy (UPS) reveals that metal/P3HT band alignment shifts dramatically as samples are dedoped, leading to an increased injection barrier for holes, with a greater shift for Au/P3HT. These results demonstrate that doping can drastically alter band alignment and the charge injection process at metal/organic interfaces.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0512318
dc.identifierhttp://arxiv.org/abs/cond-mat/0512318
dc.identifierPhys. Rev. B 72, 235302 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.235302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105559
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleDoping dependent charge injection and band alignment in organic field-effect transistors
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