The quantum Hall effect under the influence of a top-gate and integrating AC lock-in measurements

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dc.creatorKramer, Tobias
dc.creatorHeller, Eric J.
dc.creatorParrott, Robert E.
dc.date2009-05-20
dc.date.accessioned2026-07-07T13:16:47Z
dc.date.available2026-07-07T13:16:47Z
dc.descriptionLow frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate covering a large part of the device. The gate is kept on a constant voltage, while the Hall voltage is recorded using an integrating alternating-current lock-in technique. The resulting Hall curves show inflection points at the arithmetic mean between two integer plateaus, which are not necessarily related to the distribution of the density of states within a Landau level.
dc.description7 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0905.3286
dc.identifierhttp://arxiv.org/abs/0905.3286
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230906
dc.subjectMesoscale and Nanoscale Physics
dc.titleThe quantum Hall effect under the influence of a top-gate and integrating AC lock-in measurements
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