Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

Simple item page
dc.creatorPozdnyakov, Dmitry
dc.creatorGalenchik, Vadim
dc.creatorBorzdov, Vladimir
dc.creatorKomarov, Fadei
dc.creatorZhevnyak, Oleg
dc.date2006-04-06
dc.date.accessioned2026-07-07T07:05:20Z
dc.date.available2026-07-07T07:05:20Z
dc.descriptionAn approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.
dc.description6 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0604177
dc.identifierhttp://arxiv.org/abs/cond-mat/0604177
dc.identifierPhys. Low-Dim. Struct. 1, 19-24 (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109632
dc.subjectMesoscale and Nanoscale Physics
dc.titleIonized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels
dc.typetext

Files

Collections

arXiv