Raman imaging of doping domains in graphene on SiO2

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dc.creatorStampfer, C.
dc.creatorWirtz, L.
dc.creatorJungen, A.
dc.creatorGraf, D.
dc.creatorMolitor, F.
dc.creatorHierold, C.
dc.creatorEnsslin, K.
dc.date2007-09-26
dc.date.accessioned2026-07-07T08:55:57Z
dc.date.available2026-07-07T08:55:57Z
dc.descriptionWe present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line -- the most significant Raman peak to identify single-layer graphene -- as a function of charging up to |n|~4 10^12 cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole-doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the line width of the 2D line is, in contrast to the G line, doping-independent making this quantity a reliable measure for identifying single-layer graphene.
dc.identifierhttps://arxiv.org/abs/0709.4156
dc.identifierhttp://arxiv.org/abs/0709.4156
dc.identifierAppl. Phys. Lett., 91, 241907, (2007)
dc.identifierdoi:10.1063/1.2816262
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/146445
dc.subjectMaterials Science
dc.titleRaman imaging of doping domains in graphene on SiO2
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