Observation of Partially Suppressed Shot Noise in Hopping Conduction

Simple item page
dc.creatorKuznetsov, V. V.
dc.creatorMendez, E. E.
dc.creatorCroke, E. T.
dc.creatorZuo, X.
dc.creatorSnider, G. L.
dc.date2000-02-28
dc.date.accessioned2026-07-07T02:36:53Z
dc.date.available2026-07-07T02:36:53Z
dc.descriptionWe have observed shot noise in the hopping conduction of two dimensional carriers confined in a p-type SiGe quantum well at a temperature of 4K. Moreover, shot noise is suppressed relative to its ``classical'' value 2eI by an amount that depends on the length of the sample and carrier density, which was controlled by a gate voltage. We have found a suppression factor to the classical value of about one half for a 2 $μ$m long sample, and of one fifth for a 5 $μ$m sample. In each case, the factor decreased slightly as the density increased toward the insulator-metal transition. We explain these results in terms of the characteristic length ($\simeq 1μ$m in our case) of the inherent inhomogeneity of hopping transport.
dc.description4 pages (RevTex), 3 figures (eps)
dc.identifierhttps://arxiv.org/abs/cond-mat/0002439
dc.identifierhttp://arxiv.org/abs/cond-mat/0002439
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16091
dc.subjectMesoscale and Nanoscale Physics
dc.titleObservation of Partially Suppressed Shot Noise in Hopping Conduction
dc.typetext

Files

Collections

arXiv