Ten-nanometer surface intrusions in room temperature silicon
| dc.creator | Lin, Shu-Han | |
| dc.creator | Mack, Iris | |
| dc.creator | Pongkrapan, Noom | |
| dc.creator | Fraundorf, P. | |
| dc.date | 2001-10-19 | |
| dc.date.accessioned | 2026-07-07T02:43:12Z | |
| dc.date.available | 2026-07-07T02:43:12Z | |
| dc.description | Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\em in situ}. Possible mechanisms of formation are discussed. | |
| dc.description | 4 pages, 5 figures, RevTeX4 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0110393 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0110393 | |
| dc.identifier | Electrochemical and Solid-State Letters, 5 (9) G83-G85 (2002) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/18407 | |
| dc.subject | Materials Science | |
| dc.subject | Chemical Physics | |
| dc.title | Ten-nanometer surface intrusions in room temperature silicon | |
| dc.type | text |