The Ebers-Moll model for magnetic bipolar transistors

dc.creatorFabian, J.
dc.creatorZutic, I.
dc.date2004-09-08
dc.date.accessioned2026-07-07T06:23:28Z
dc.date.available2026-07-07T06:23:28Z
dc.descriptionThe equivalent electrical circuit of the Ebers-Moll type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409196
dc.identifierhttp://arxiv.org/abs/cond-mat/0409196
dc.identifierAppl. Phys. Lett. 86, 133506 (2005)
dc.identifierdoi:10.1063/1.1886251
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96245
dc.subjectOther Condensed Matter
dc.titleThe Ebers-Moll model for magnetic bipolar transistors
dc.typetext

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