Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

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dc.creatorCastro, Eduardo V.
dc.creatorNovoselov, K. S.
dc.creatorMorozov, S. V.
dc.creatorPeres, N. M. R.
dc.creatorSantos, J. M. B. Lopes dos
dc.creatorNilsson, Johan
dc.creatorGuinea, F.
dc.creatorGeim, A. K.
dc.creatorNeto, A. H. Castro
dc.date2006-11-13
dc.date2007-11-16
dc.date.accessioned2026-07-07T08:43:48Z
dc.date.available2026-07-07T08:43:48Z
dc.descriptionWe demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
dc.description4 pages, 5 figures. To appear in Physical Review Letters, November 2007
dc.identifierhttps://arxiv.org/abs/cond-mat/0611342
dc.identifierhttp://arxiv.org/abs/cond-mat/0611342
dc.identifierPhys. Rev. Lett. 99, 216802 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.216802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142447
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleBiased bilayer graphene: semiconductor with a gap tunable by electric field effect
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