Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes

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dc.creatorKokado, Satoshi
dc.creatorHarigaya, Kikuo
dc.date2004-02-04
dc.date.accessioned2026-07-07T02:56:17Z
dc.date.available2026-07-07T02:56:17Z
dc.descriptionFor spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the intrinsic relation between the number of paths and conduction, and to enhance the magnetoresistance (MR) ratio. When many paths are randomly located between the two FMs, electronic wave interference between the FMs appears, and then the MR ratio increases with increasing number of paths. Furthermore, at each number of paths, the MR ratio for carbon nanotubes becomes larger than that for atomic wires, reflecting the characteristic shape of points in contact with the FM.
dc.description7 pages, 3 figures, accepted for publication in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0402119
dc.identifierhttp://arxiv.org/abs/cond-mat/0402119
dc.identifierPhys. Rev. B 69, 132402 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.132402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23263
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.subjectQuantum Physics
dc.titleMagnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes
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