Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition

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dc.creatorArapov, Yu. G.
dc.creatorGudina, S. V.
dc.creatorHarus, G. I.
dc.creatorNeverov, V. N.
dc.creatorShelushinina, N. G.
dc.creatorYakunin, M. V.
dc.creatorPodgornyh, S. M.
dc.creatorUskova, E. A.
dc.creatorZvonkov, B. N.
dc.date2005-12-28
dc.date.accessioned2026-07-07T06:53:43Z
dc.date.available2026-07-07T06:53:43Z
dc.descriptionThe resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.
dc.descriptionAccepted for publication in International Journal of Nanoscience
dc.identifierhttps://arxiv.org/abs/cond-mat/0512678
dc.identifierhttp://arxiv.org/abs/cond-mat/0512678
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105687
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleTransport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
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