Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

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dc.creatorDzhioev, R. I.
dc.creatorKorenev, V. L.
dc.creatorLazarev, M. V.
dc.creatorSapega, V. F.
dc.creatorGammon, D.
dc.creatorBracker, A. S.
dc.date2006-09-14
dc.date.accessioned2026-07-07T09:29:43Z
dc.date.available2026-07-07T09:29:43Z
dc.descriptionWe report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.
dc.description18 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0609349
dc.identifierhttp://arxiv.org/abs/cond-mat/0609349
dc.identifierPhysical Review B 75 033317 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.033317
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157888
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well
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