Transverse Averaging Technique for Depletion Capacitance of Nonuniform PN-Junctions

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dc.creatorBarybin, Anatoly A.
dc.creatorSantos, Edval J. P.
dc.date2007-01-23
dc.date.accessioned2026-07-07T07:42:35Z
dc.date.available2026-07-07T07:42:35Z
dc.descriptionThis article evolves an analytical theory of nonuniform $PN$-junctions by employing the transverse averaging technique (TAT) to reduce the three-dimensional semiconductor equations to the quasi-one-dimensional (quasi-1D) form involving all physical quantities as averaged over the longitudinally-varying cross section $S(z)$. Solution of the quasi-1D Poisson's equation shows that, besides the usual depletion capacitance $C_p$ and $C_n$ due to the $p$- and $n$-layers, there is an additional capacitance $C_s$ produced by nonuniformity of the cross-section area $S(z)$. The general expressions derived yield the particular formulas obtained previously for the abrupt and linearly-graded junctions with uniform cross-section. The quasi-1D theory of nonuniform structures is demonstrated by applying the general formulas to the $PN$-junctions of exponentially-varying cross section $S(z)=S_0\exp(αz)$ as most universal and applicable to any polynomial approximation $S(z)\simeq S_0(1+αz)^n$.
dc.description12 pages, 2 figures, to appear in Semiconducor Science and Technology
dc.identifierhttps://arxiv.org/abs/cond-mat/0701552
dc.identifierhttp://arxiv.org/abs/cond-mat/0701552
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122496
dc.subjectOther Condensed Matter
dc.titleTransverse Averaging Technique for Depletion Capacitance of Nonuniform PN-Junctions
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