Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations

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dc.creatorHaley, Benjamin P.
dc.creatorBeardmore, Keith M.
dc.creatorGrønbech-Jensen, Niels
dc.date2006-06-29
dc.date.accessioned2026-07-07T07:12:57Z
dc.date.available2026-07-07T07:12:57Z
dc.descriptionDiffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by Kinetic Lattice Monte Carlo simulations. It is found that higher temperatures lead to larger clusters with shorter lifetimes on average, which grow by attracting free vacancies, while clusters at lower temperatures grow by aggregation of smaller clusters. Long interaction ranges produce enhanced diffusivity and fewer clusters. Greater vacancy concentrations lead to more clusters, with fewer free vacancies, but the size of the clusters is largely independent of concentration. Vacancy diffusivity is shown to obey power law behavior over time, and the exponent of this law is shown to increase with concentration, at fixed temperature, and decrease with temperature, at fixed concentration.
dc.description14 pages, 12 figures. To appear in Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0606781
dc.identifierhttp://arxiv.org/abs/cond-mat/0606781
dc.identifierPhysical Review B 74, 045217 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.045217
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112267
dc.subjectMaterials Science
dc.subjectStatistical Mechanics
dc.titleVacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations
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