Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures

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dc.creatorIndlekofer, K. M.
dc.creatorKnoch, J.
dc.creatorAppenzeller, J.
dc.date2006-04-10
dc.date.accessioned2026-07-07T07:05:24Z
dc.date.available2026-07-07T07:05:24Z
dc.descriptionWith the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters.
dc.identifierhttps://arxiv.org/abs/cond-mat/0604247
dc.identifierhttp://arxiv.org/abs/cond-mat/0604247
dc.identifierPhys. Rev. B 74, 113310 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.113310
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109658
dc.subjectOther Condensed Matter
dc.titleQuantum confinement corrections to the capacitance of gated one-dimensional nanostructures
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