The terahertz phonon laser: a full quantum treatment

Simple item page
dc.creatorCamps, I.
dc.creatorMakler, S. S.
dc.creatorPastawski, H. M.
dc.creatorTorres, L. E. F. Foa
dc.date2001-01-04
dc.date.accessioned2026-07-07T06:32:17Z
dc.date.available2026-07-07T06:32:17Z
dc.descriptionThe aim of this work is to describe the behavior of a device capable to generate high frequency (~THz) acoustic phonons. This device consists in a GaAs-AlGaAs double barrier heterostructure that, when an external bias is applied, produces a high rate of longitudinal optical LO phonons. These LO phonons are confined and they decay by stimulated emission of a pair of secondary longitudinal optical (LO_2) and transversal acoustic (TA) phonons. The last ones form an intense beam of coherent acoustic phonons. To study this effect, we start from a tight binding Hamiltonian that take into account the electron-phonon (e-ph) and phonon-phonon (ph-ph) interactions. We calculate the electronic current through the double barrier and we obtain a set of five coupled kinetic equations that describes the electron and phonon populations. The results obtained here confirm the behavior of the terahertz phonon laser, estimated by rougher treatments.
dc.description8 figures, submitted for publication in Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0101043
dc.identifierhttp://arxiv.org/abs/cond-mat/0101043
dc.identifierPhys. Rev. B 64, 125311 (2001)
dc.identifierdoi:10.1103/PhysRevB.64.125311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98858
dc.subjectMesoscale and Nanoscale Physics
dc.titleThe terahertz phonon laser: a full quantum treatment
dc.typetext

Files

Collections

arXiv