Quenching of the Quantum Hall Effect in PbTe Wide Parabolic Quantum Wells

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dc.creatorOswald, J.
dc.creatorHeigl, G.
dc.creatorSpan, G.
dc.creatorHomer, A.
dc.creatorGanitzer, P.
dc.creatorMaude, D. K.
dc.creatorPortal, J. C.
dc.date1997-07-17
dc.date.accessioned2026-07-07T09:11:55Z
dc.date.available2026-07-07T09:11:55Z
dc.descriptionWe show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is replaced by conductance fluctuations due to EC backscattering in the contact arms, which leads to a fluctuating current redistribution between a dissipative bulk electron system and a less-dissipative EC-system. Both electron systems are located in different valleys of the band structure. The linear increase of Rxx with the magnetic field is explained by EC-backscattering in the Hall bar
dc.descriptionpostscript file including 2 figs, 4 pages, Paper presented at ICPS-XXIII, Berlin 1996
dc.identifierhttps://arxiv.org/abs/cond-mat/9707170
dc.identifierhttp://arxiv.org/abs/cond-mat/9707170
dc.identifierProc. 23rd ICPS Berlin, 2499, World Scientific Singapore 1996
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151853
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuenching of the Quantum Hall Effect in PbTe Wide Parabolic Quantum Wells
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