Determination of spin polarization in InAs/GaAs self-assembled quantum dots

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dc.creatorHernandez, F. G. G.
dc.creatorAlegre, T. P. Mayer
dc.creatorMedeiros-Ribeiro, G.
dc.date2007-10-24
dc.date2008-03-16
dc.date.accessioned2026-07-07T09:29:59Z
dc.date.available2026-07-07T09:29:59Z
dc.descriptionThe spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the addition energies. From the magneto-capacitance spectroscopy data, the authors found a fully polarized ensemble of electronic spins above 10 T when $\mathbf{B}\parallel[001]$ and at 2.8 K. Finally, by including the g-tensor anisotropy the angular dependence of spin polarization with the magnetic field $\mathbf{B}$ orientation and strength could be determined.
dc.description3 pages, 2 figures, Accepted Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/0710.4542
dc.identifierhttp://arxiv.org/abs/0710.4542
dc.identifierApplied Physics Letters 92, 132106 (2008)
dc.identifierdoi:10.1063/1.2905809
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157991
dc.subjectMaterials Science
dc.titleDetermination of spin polarization in InAs/GaAs self-assembled quantum dots
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