Pressure induced Insulator-Metal transition in LaMnO$_3$
| dc.creator | Fuhr, Javier D. | |
| dc.creator | Alascio, Blas | |
| dc.creator | Avignon, Michel | |
| dc.date | 2007-06-01 | |
| dc.date.accessioned | 2026-07-07T13:03:57Z | |
| dc.date.available | 2026-07-07T13:03:57Z | |
| dc.description | The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature (780 K), opens the way to a study of the role of the orbital degrees of freedom on the electronic structure in a stoichiometric material. In this paper we focus our attention in the orbital aspects of the insulator to metal transition. We use a model Hamiltonian for the $e_g$ orbitals of Mn that includes the on site Coulomb repulsion $U$, the hopping $t$, and its dependence with pressure. In order to include in an appropriate way the strong correlations induced by the dominant electron-electron interactions we introduce auxiliary fields (Slave Bosons,SB) to the description of the low energy states. We use a O-Mn distance ($d$) dependence of $t$ and the pressure-$d$ relation from the experimental data to describe the evolution of the electronic structure with pressure. Our results confirm and make transparent the conclusion reached in previous ab-initio calculations: the inclusion of the Coulomb energy is necessary and constitutes an important factor enhancing the orbital polarization in these compounds. | |
| dc.description | 7 pages, 5 figures | |
| dc.identifier | https://arxiv.org/abs/0706.0184 | |
| dc.identifier | http://arxiv.org/abs/0706.0184 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/226992 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Pressure induced Insulator-Metal transition in LaMnO$_3$ | |
| dc.type | text |