Room temperature ferromagnetism in carbon-implanted ZnO

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dc.creatorZhou, Shengqiang
dc.creatorXu, Qingyu
dc.creatorPotzger, Kay
dc.creatorTalut, Georg
dc.creatorGroetzschel, Rainer
dc.creatorFassbender, Juergen
dc.creatorVinnichenko, Mykola
dc.creatorGrenzer, Joerg
dc.creatorHelm, Manfred
dc.creatorHochmuth, Holger
dc.creatorLorenz, Michael
dc.creatorGrundmann, Marius
dc.creatorSchmidt, Heidemarie
dc.date2008-11-21
dc.date.accessioned2026-07-07T12:12:08Z
dc.date.available2026-07-07T12:12:08Z
dc.descriptionUnexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
dc.description13 pages, 3 figs, accepted for publication at Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/0811.3487
dc.identifierhttp://arxiv.org/abs/0811.3487
dc.identifierAppl. Phys. Lett. 93, 232507 (2008)
dc.identifierdoi:10.1063/1.3048076
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/210450
dc.subjectMaterials Science
dc.titleRoom temperature ferromagnetism in carbon-implanted ZnO
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