Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

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dc.creatorMonsef, F.
dc.creatorDollfus, P.
dc.creatorGaldin-Retailleau, S.
dc.creatorHerzog, H. -J.
dc.creatorHackbarth, T.
dc.date2003-11-03
dc.date2003-12-17
dc.date.accessioned2026-07-07T02:54:34Z
dc.date.available2026-07-07T02:54:34Z
dc.descriptionThe electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.
dc.description26 pages, 1 table, 9 figures, revised version: new references and discussions added
dc.identifierhttps://arxiv.org/abs/cond-mat/0311030
dc.identifierhttp://arxiv.org/abs/cond-mat/0311030
dc.identifierJournal of Applied Physics 95 (7), 3587-3593 (2004)
dc.identifierdoi:10.1063/1.1650885
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22599
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
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