Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

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dc.creatorIndlekofer, K. M.
dc.creatorKnoch, J.
dc.creatorAppenzeller, J.
dc.date2005-04-28
dc.date.accessioned2026-07-07T06:33:06Z
dc.date.available2026-07-07T06:33:06Z
dc.descriptionIn this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.
dc.identifierhttps://arxiv.org/abs/cond-mat/0504746
dc.identifierhttp://arxiv.org/abs/cond-mat/0504746
dc.identifierPhys. Rev. B 72, 125308 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.125308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/99087
dc.subjectOther Condensed Matter
dc.titleQuantum kinetic description of Coulomb effects in one-dimensional nano-transistors
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